Solid state p-n heterojunction sensitized photovoltaic solar cell with electron and hole conductors
2005
Abstract
A solid state p-n heterojunction comprising an electron conductor and a hole conductor; it further comprises a sensitising semiconductor, said sensitizing semiconductor being located at an interface between said electron conductor and said hole conductor. In particular, the sensitizing semiconductor is in form of quantum-dots. A solid state sensitized photovoltaic cell comprises such a layered heterojunction between two electrodes.
Details
Title
Solid state p-n heterojunction sensitized photovoltaic solar cell with electron and hole conductors
Author(s)
Graetzel, Michael ; Plass, Robert ; Bach, Udo
Date
2005
Publisher
(Ecole Polytechnique Federale de Lausanne (EPFL), Switz.).
Note
Alternative title(s) :
(de) Festkörper-heteroübergang und sensibilisierte festkörper photovoltaische zelle
(fr) Hétérojonction à l'état solide et cellule photovoltaique sensibilisé à l'état solide
(en) Solid state heterojunction and solid state sensitized photovoltaic cell
Other identifier(s)
EPO Family ID: 33566228
Patent number(s)
JP2014042082 (A)
US7042029 (B2)
US6861722 (B2)
AU779449 (B2)
US2005006714 (A1)
JP2002111031 (A)
US2002017656 (A1)
AU5771101 (A)
EP1176646 (A1)
US7042029 (B2)
US6861722 (B2)
AU779449 (B2)
US2005006714 (A1)
JP2002111031 (A)
US2002017656 (A1)
AU5771101 (A)
EP1176646 (A1)
Laboratories
LPI
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > ISIC - Institute of Chemical Sciences and Engineering > LPI - Laboratory of Photonics and Interfaces
Work produced at EPFL
Patents
Work produced at EPFL
Patents
Record creation date
2006-02-21