Abstract
A photovoltaic Schottky-barrier element comprising a semiconductor substrate carrying a ruthenium dioxide layer as the metallic contact thereof. A solar cell and a photochemical cell are also described comprising, as the photovoltaic element or electrode, respectively, thereof, a photovoltaic Schottky-barrier element of the present invention.
Details
Title
Photovoltaic Schottky-barrier elements
Author(s)
Gissler, Wolfram ; McEvoy, Augustine Joseph
Date
1983
Publisher
(European Atomic Energy Community (Euratom), Luxembourg).
Note
Alternative title(s) :
(de) Photovoltaische elemente mit schottky-übergang.
(fr) Eléments photovoltaiques à barrière schottky.
(en) Photovoltaic schottky-barrier elements.
Other identifier(s)
EPO Family ID: 10524229
Patent number(s)
GB2104721 (B)
EP0073639 (A3)
EP0073639 (A2)
GB2104721 (A)
EP0073639 (A3)
EP0073639 (A2)
GB2104721 (A)
Laboratories
LPI
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > ISIC - Institute of Chemical Sciences and Engineering > LPI - Laboratory of Photonics and Interfaces
Work produced at EPFL
Patents
Work produced at EPFL
Patents
Record creation date
2006-02-21