Infoscience

Report

NANOSTENCIL-BASED LITHOGRAPHY FOR SILICON NANOWIRES FABRICATION

We propose a novel lithography method based on local deposition through miniature shadow-masks (nanostencils) for the fabrication of silicon based nanoelectronics devices. We demonstrate the fabrication of nanowires with a CMOS compatible stencil based lithography process. The silicon nitride (SiN) stencil is fabricated using optical lithography combined with procedures. Then 45 nm wide structures are made using focused ion beam (FIB) milling. The process results in a 110 nm wide silicon nanowire.

    Reference

    • LMIS1-REPORT-2006-003

    Record created on 2006-02-17, modified on 2016-08-08

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