NANOSTENCIL-BASED LITHOGRAPHY FOR SILICON NANOWIRES FABRICATION

We propose a novel lithography method based on local deposition through miniature shadow-masks (nanostencils) for the fabrication of silicon based nanoelectronics devices. We demonstrate the fabrication of nanowires with a CMOS compatible stencil based lithography process. The silicon nitride (SiN) stencil is fabricated using optical lithography combined with procedures. Then 45 nm wide structures are made using focused ion beam (FIB) milling. The process results in a 110 nm wide silicon nanowire.


Year:
2005
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2006-02-17, last modified 2018-03-17

n/a:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)