000064511 001__ 64511
000064511 005__ 20181203020059.0
000064511 02470 $$2ISI$$a000226761400048
000064511 037__ $$aARTICLE
000064511 245__ $$aSubmicrometer Hall devices fabricated by focused electron-beam-induced deposition
000064511 269__ $$a2005
000064511 260__ $$c2005
000064511 336__ $$aJournal Articles
000064511 520__ $$aHall devices having an active area of about (500 nm)2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 uT/Hz^1/2 at frequencies above 1 kHz.
000064511 700__ $$0240034$$g110635$$aBoero, G
000064511 700__ $$aUtke, I
000064511 700__ $$0241342$$g144299$$aBret, T
000064511 700__ $$0249161$$g136108$$aQuack, Niels
000064511 700__ $$aTodorova, M
000064511 700__ $$0240035$$g149010$$aMouaziz, S
000064511 700__ $$0241343$$g114934$$aKejik, P
000064511 700__ $$aBrugger, J$$g145781$$0240120
000064511 700__ $$aPopovic, R S$$g106136$$0241021
000064511 700__ $$aHoffmann, P$$g113150$$0241019
000064511 773__ $$j86$$tVirtual Journal of Nanoscale Science & Technology$$k042503
000064511 909C0 $$xU10321$$0252040$$pLMIS1
000064511 909C0 $$xU13060$$0252536$$pQ-LAB
000064511 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:64511
000064511 917Z8 $$x144315
000064511 917Z8 $$x221788
000064511 937__ $$aLMIS1-ARTICLE-2006-001
000064511 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000064511 980__ $$aARTICLE