Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
2005
Details
Title
Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
Author(s)
Ecoffey, S. ; Pott, V. ; Bouvet, D. ; Leblebici, Y. ; Declercq, M. J. ; Ionescu, A. M.
Published in
Digest of Technical Papers of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05)
Volume
1
Pages
859-862
Conference
13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), Seoul, Korea, June 5-9
Date
2005
Other identifier(s)
View record in Web of Science
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2005-12-06