DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY.

The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) that offers a lot of possibilities for microsystems development. The purpose of this presentation is to give an overview of bulk silicon processing techniques using new ICP etching equipment in the field of microsystems development.


Published in:
ISPC15
Presented at:
ISPC 15, Orléans, France, July, 2001
Year:
2001
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2005-11-03, last modified 2018-03-17

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