DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY.
HIBERT, C; DUFOUR, W; FLUCKIGER, Ph
2001
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Abstract

The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) that offers a lot of possibilities for microsystems development. The purpose of this presentation is to give an overview of bulk silicon processing techniques using new ICP etching equipment in the field of microsystems development.

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Title DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY.
Author(s) HIBERT, C ; DUFOUR, W ; FLUCKIGER, Ph
Published in ISPC15
Conference ISPC 15, Orléans, France, July, 2001
Date 2001
Laboratories CMI
Record Appears in Scientific production and competences > STI - School of Engineering > CMI - Center of MicroNanoTechnology
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2005-11-03

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