000058425 001__ 58425
000058425 005__ 20190316233550.0
000058425 037__ $$aARTICLE
000058425 245__ $$aFabrication of functional structures on thin silicon nitride membranes
000058425 269__ $$a2003
000058425 260__ $$c2003
000058425 336__ $$aJournal Articles
000058425 520__ $$aA process to fabricate functional polysilicon structures above large (4 x 4 mm(2)) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrificial layer, avoidance of sharp corners in the design of the functional polysilicon structures, and annealing of the polysilicon after doping. A polysilicon layer that was directly attached to the silicon nitride membrane was used. The polysilicon was doped locally to separate the rotors from the stators electrically, preventing short-circuiting. The layer was patterned with a hexagonal supporting structure that serves three main functions: membrane strengthening, electrical wiring and microactuation. As a demonstration of the technology a pseudo hexagonal polysilicon framework with embedded comb-drive actuated microshutter suspended above a similar to 150-nm thick membrane, was successfully fabricated.
000058425 700__ $$aEkkels, P
000058425 700__ $$aTjerkstra, RW
000058425 700__ $$aKrijnen, GJM
000058425 700__ $$aBerenschot, JW
000058425 700__ $$0240120$$aBrugger, J$$g145781
000058425 700__ $$aElwenspoek, MC
000058425 773__ $$j67-8$$q422-429$$tMicroelectronic Engineering
000058425 8564_ $$s506076$$uhttps://infoscience.epfl.ch/record/58425/files/Ekkels_2003_MicroEng.pdf$$zn/a
000058425 909C0 $$0252040$$pLMIS1$$xU10321
000058425 909CO $$ooai:infoscience.tind.io:58425$$pSTI$$particle$$qGLOBAL_SET
000058425 937__ $$aLMIS1-ARTICLE-2003-002
000058425 970__ $$aISI:000183842100059/LMIS1
000058425 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000058425 980__ $$aARTICLE