Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication
Pavius, M.; Hibert, C.; Flückiger, Ph.; Renaud, Philippe; Rolland, L.; Puech, M.
2004
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Abstract

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8degrees, SiO2 etch rate: 500 nm / min, selectivity: 18:1.

Details

Title Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication
Author(s) Pavius, M. ; Hibert, C. ; Flückiger, Ph. ; Renaud, Philippe ; Rolland, L. ; Puech, M.
Published in 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest
Pages 669-672
Conference 17th IEEE International Conference on Micro Electro Mechanical Systems, Maastricht, NETHERLANDS, JAN 25-29, 2004
Date 2004
Keywords
DOI https://doi.org/10.1109/MEMS.2004.1290673
Laboratories LMIS4
CMI
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LMIS4 - Microsystems Laboratory 4
Scientific production and competences > STI - School of Engineering > CMI - Center of MicroNanoTechnology
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2005-09-13

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