Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8degrees, SiO2 etch rate: 500 nm / min, selectivity: 18:1.


Published in:
MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 669-672
Presented at:
17th IEEE International Conference on Micro Electro Mechanical Systems, Maastricht, NETHERLANDS, JAN 25-29, 2004
Year:
2004
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 Record created 2005-09-13, last modified 2018-03-18

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