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  4. Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches
 
research article

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Rezaei, Mohammad  
•
Matioli, Elison  
•
Rezaei, Mohammad
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2024
IEEE Electron Device Letters

Despite recent advancements in photonics and electronics, there remains a lack of efficient, compact, high-power sources in the terahertz spectrum (0.3-10 THz). Recent research has revealed that nanoplasma (NP) switches can exhibit extremely fast transitions, on the order of picoseconds or less. However, no literature has demonstrated their ability to produce signals above 100 GHz. In this work, we present a novel technique for generating high-power THz leveraging the fast transitions in NPs. By coupling an NP switch to a judiciously designed THz resonator, we have achieved a chip-scale, high-power THz source that operates at room temperature. We report state-of-the-art peak power of 2W at 0.4 THz. While this finding highlights the rapid-transition capability of NP, it merely represents a lower limit on the NP transition speed. This research opens a pathway for efficient, compact, and high-power THz sources.

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Type
research article
DOI
10.1109/LED.2024.3387066
Author(s)
Rezaei, Mohammad  
Matioli, Elison  
Rezaei, Mohammad
Matioli, Elison
Date Issued

2024

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Volume

45

Issue

6

Start page

1072

End page

1075

Subjects

THz gap

•

nanoplasma transition switch

•

field emission

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THz resonator

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
POWERLAB  
Available on Infoscience
June 5, 2024
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/208449
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