High sensitivity single-photon avalanche diode array
2021
Abstract
The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored along a hexagonal grid; - microlenses, having a hexagonal or circular shape, each arranged on one photodetector cell to focus light onto the photodiode.
Details
Title
High sensitivity single-photon avalanche diode array
Author(s)
Antolovic, Ivan ; Bruschini, Claudio ; Charbon, Edoardo
Date
2021
Keywords
Note
Alternative title(s) : (fr) Réseau de diodes à avalanche monophotonique à haute sensibilité
Other identifier(s)
EPO Family ID: 68542600
Patent number(s)
US2022384671 (A1)
WO2021089115 (A1)
WO2021089115 (A1)
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > AQUA - Quantum Architecture Group
Scientific production and competences > EPFL Partners > Neuchâtel Campus > AQUA - Quantum Architecture Group
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Scientific production and competences > EPFL Partners > Neuchâtel Campus > AQUA - Quantum Architecture Group
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Record creation date
2021-06-01