In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and reverse-recovery measurements, which results in a much improved R ON ·Q rr figure-of-merit. The Tri-Anode excellent switching performance, combined with the superior DC behavior, makes these devices very promising for future ultra-fast and high-power applications. The diode performance was demonstrated by realizing a monolithically-integrated Diode Bridge Rectifier able to operate at high frequency and achieve AC to DC conversion. These results reveal the outstanding potential of GaN Tri-Anode SBD for ultrafast, large power-density and high-efficiency future power integrated circuits.