High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and reverse-recovery measurements, which results in a much improved R ON ·Q rr figure-of-merit. The Tri-Anode excellent switching performance, combined with the superior DC behavior, makes these devices very promising for future ultra-fast and high-power applications. The diode performance was demonstrated by realizing a monolithically-integrated Diode Bridge Rectifier able to operate at high frequency and achieve AC to DC conversion. These results reveal the outstanding potential of GaN Tri-Anode SBD for ultrafast, large power-density and high-efficiency future power integrated circuits.


Published in:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Presented at:
32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020
Year:
Aug 18 2020
Publisher:
IEEE
Laboratories:


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 Record created 2020-09-25, last modified 2020-10-25

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