Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Write Termination (WT) circuits are a potential solution to solve these issues. However, previously reported WT circuits do not demonstrate sufficient reliability. In this work, we propose an industrially-ready WT circuit that was simulated with a RRAM model calibrated on real measurements. We perform extensive CMOS and RRAM variability simulations to extract the actual performances of the proposed WT circuit. Finally, we simulate the effects of the proposed WT circuit with memory traces extracted from real Edge-level data-intensive applications. Overall, we demonstrate 2x to 40x of energy gains at bit level. Moreover, we show from 1.9x to 16.2x energy gains with real applications running depending on the application memory access pattern thanks to the proposed WT circuit.


Published in:
Ieee Access, 8, 109297-109308
Year:
Jun 05 2020
Publisher:
IEEE
ISSN:
2169-3536
Keywords:
Laboratories:


Note: The status of this file is: Anyone


 Record created 2020-06-05, last modified 2020-07-22

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