Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
2018
Abstract
A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.
Details
Title
Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
Author(s)
Biswas, Arnab ; Tomar, Saurabh ; Ionescu, Adrian Mihai
Date
2018
Keywords
Other identifier(s)
EPO Family ID: 60911088
Patent number(s)
US2018012659 (A1)
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Record creation date
2019-12-05