1/f Noise Model of 980 nm InGaAs/GaAs Laser Diodes based on Parasitic Parameters under Low Injection Current
2019
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Details
Title
1/f Noise Model of 980 nm InGaAs/GaAs Laser Diodes based on Parasitic Parameters under Low Injection Current
Author(s)
Chen, Xiaojuan ; Qu, Chang
Editor(s)
Conference
25th International Conference on Noise and Fluctuations (ICNF 2019), EPFL Neuchâtel campus - Neuchâtel, Switzerland, 18 - 21 June 2019
Date
2019
Publisher
ICLAB
Laboratories
ICLAB
Record Appears in
Scientific production and competences > EPFL Partners > Neuchâtel Campus > ICLAB - Integrated Circuits Laboratory
Scientific production and competences > STI - School of Engineering > STI Archives > ICLAB - Integrated Circuits Laboratory
Peer-reviewed publications
Work outside EPFL
Conference Papers
Scientific production and competences > STI - School of Engineering > STI Archives > ICLAB - Integrated Circuits Laboratory
Peer-reviewed publications
Work outside EPFL
Conference Papers
Record creation date
2019-08-22