Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors fixed on a diamond heat-sink substrate in a flip-chip geometry, incorporated in a V-cavity configuration. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11 degrees C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. This demonstration represents more than five-fold increase of the output power compared to the state-of-the-art flip-chip VECSELs previously reported at the 1.55 mu m wavelength range. It opens new perspectives for developing practical VECSEL-based laser systems operating at a wavelength range widely used in many applications.


Published in:
Ieee Journal Of Selected Topics In Quantum Electronics, 25, 6, 1700605
Year:
Nov 01 2019
Publisher:
Piscataway, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN:
1077-260X
1558-4542
Keywords:
Laboratories:




 Record created 2019-07-17, last modified 2019-08-30


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