000267976 001__ 267976
000267976 005__ 20190812204805.0
000267976 037__ $$aCONF
000267976 245__ $$aInjection-dependent lateral resistance in front-junction solar cells with nc-Si:H and a-Si:H hole selective contact
000267976 260__ $$c2019
000267976 269__ $$a2019
000267976 300__ $$a4
000267976 336__ $$aConference Papers
000267976 520__ $$aWe investigate the role of lateral transport of minority carriers in the wafer for front-junction solar cells. The study is based on two silicon heterojunction solar cells with p-type amorphous (a-Si), and nanocrystalline (nc-Si) silicon as hole selective layer respectively. The solar cells feature similar certified efficiencies (23.23% and 23.45%). Unexpectedly, FF and RS at MPP of both solar cells are also similar. Fitting the JV curves in high-forward bias, and analytical calculations suggest that lateral transport is also taking place in the wafer at high injection, despite the front–junction configuration. This is supported by numerical device simulations. Both reveal that junction-related RS is lower with nc-Si(p) than with a-Si(p). The results underline the importance of analyzing JV curves over a wide voltage range unravel different phenomena determining FF.
000267976 6531_ $$aamorphous materials
000267976 6531_ $$acrystalline materials
000267976 6531_ $$afill factor
000267976 6531_ $$aloss analysis
000267976 6531_ $$anumerical simulation
000267976 6531_ $$aphotovoltaic cells
000267976 6531_ $$asilicon
000267976 700__ $$0249255$$aHaschke, Jan$$g263555
000267976 700__ $$aMessmer, Christoph
000267976 700__ $$0249254$$aCattin, Jean$$g194907
000267976 700__ $$aBivour, Martin
000267976 700__ $$0243397$$aBoccard, Mathieu$$g190360
000267976 700__ $$0243401$$aBallif, Christophe$$g100192
000267976 7112_ $$a46th IEEE Photovoltaic Specialists Conference (PVSC 46)$$cChicago, Illinois, USA$$dJune 16-21, 2019
000267976 773__ $$tProceedings of the 46th IEEE Photovoltaic Specialists Conference
000267976 8560_ $$fjan.haschke@epfl.ch
000267976 8564_ $$uhttps://infoscience.epfl.ch/record/267976/files/190619_Haschke_ncSi-aSi-lat-transp_proceedings_v1.pdf$$zFinal$$s707040
000267976 909C0 $$mhassan.laaroussi@epfl.ch$$mchristophe.ballif@epfl.ch$$0252194$$zMarselli, Béatrice$$xU11963$$pPV-LAB$$mkarine.frossard@epfl.ch
000267976 909CO $$pconf$$pSTI$$ooai:infoscience.epfl.ch:267976
000267976 960__ $$ajan.haschke@epfl.ch
000267976 961__ $$apierre.devaud@epfl.ch
000267976 973__ $$aEPFL$$rREVIEWED
000267976 980__ $$aCONF
000267976 981__ $$aoverwrite