Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs

Metamorphic InxAl1-xAs buffer design influence on electrophysical and structural properties of the MHEMT nanoheterostructures was investigated. Electrophysical properties of the nanoheterostructures were characterized by Hall measurements, while the struc


Published in:
Proceedings of SPIE, 8700
Presented at:
international conference micro- and nano-electronics 2012, 2012
Year:
2012
Publisher:
Russian Acad Sci
ISBN:
978-0-8194-9487-0
Laboratories:




 Record created 2019-07-04, last modified 2019-08-12


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