Identification of amorphous silicon residues in a low power CMOS technology
Acovic, A; Buffat, PA; Brander, P; Jacob, P; Jeandupeux, O; Marsico, V; Rosenfeld, D; Moser, J; Kohli, M; Fluckiger, R; Belkacem, K; Fazan, P
1999

Abstract

A large variety of physical analysis techniques are used in the semiconductor industry to identify defects impacting yield or reliability. Identification of a defect often requires the combined use of several techniques to give a clear understanding of th

Details

Title Identification of amorphous silicon residues in a low power CMOS technology
Author(s) Acovic, A ; Buffat, PA ; Brander, P ; Jacob, P ; Jeandupeux, O ; Marsico, V ; Rosenfeld, D ; Moser, J ; Kohli, M ; Fluckiger, R ; Belkacem, K ; Fazan, P
Published in Proceedings of SPIE
Editor(s)
Volume 3884
Pages 256-264
Conference in-line methods and monitors for process and yield improvement, 1999
Date 1999
Publisher SPIE
ISBN 0-8194-3481-7
DOI https://doi.org/10.1117/12.361339
Laboratories CIME
Record Appears in Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2019-07-04

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