Electroluminescence of Single InGaN/GaN Micropyramids

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520-590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.


Published in:
Optics And Spectroscopy, 126, 2, 118-123
Year:
Feb 01 2019
Publisher:
Moscow, PLEIADES PUBLISHING INC
ISSN:
0030-400X
1562-6911
Keywords:
Laboratories:




 Record created 2019-06-19, last modified 2019-08-30


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