Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.


Published in:
Proceedings Of The 2018 26Th Ifip/Ieee International Conference On Very Large Scale Integration (Vlsi-Soc), 180-183
Presented at:
26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018
Year:
Jan 01 2018
Publisher:
New York, IEEE
ISSN:
2324-8432
ISBN:
978-1-5386-4756-1
Keywords:
Laboratories:




 Record created 2019-06-18, last modified 2020-04-20


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