000266578 001__ 266578
000266578 005__ 20190625174541.0
000266578 022__ $$a1530-6984
000266578 022__ $$a1530-6992
000266578 02470 $$a000464769100017$$2isi
000266578 0247_ $$a10.1021/acs.nanolett.8b04942$$2doi
000266578 037__ $$aARTICLE
000266578 245__ $$aClamp-Tapering Increases the Quality Factor of Stressed Nanobeams
000266578 260__ $$c2019$$aWashington$$bAMER CHEMICAL SOC
000266578 269__ $$a2019-04-01
000266578 336__ $$aJournal Articles
000266578 520__ $$aStressed nanomechanical resonators are known to have exceptionally high quality factors (Q) due to the dilution of intrinsic dissipation by stress. Typically, the amount of dissipation dilution and thus the resonator Q is limited by the high mode curvature region near the clamps. Here we study the effect of clamp geometry on the Q of nanobeams made of high-stress Si3N4. We find that tapering the beam near the clamps, thus locally increasing the stress, leads to an increased Q of MHz-frequency low order modes due to enhanced dissipation dilution. Contrary to recent studies of tethered-membrane resonators, we find that widening the clamps leads to a decreased Q despite increased stress in the beam bulk. The tapered-clamping approach has practical advantages compared to the recently developed "soft-clamping" technique, as it enhances the Q of the fundamental mode and can be implemented without increasing the device size.
000266578 650__ $$aChemistry, Multidisciplinary
000266578 650__ $$aChemistry, Physical
000266578 650__ $$aNanoscience & Nanotechnology
000266578 650__ $$aMaterials Science, Multidisciplinary
000266578 650__ $$aPhysics, Applied
000266578 650__ $$aPhysics, Condensed Matter
000266578 650__ $$aChemistry
000266578 650__ $$aScience & Technology - Other Topics
000266578 650__ $$aMaterials Science
000266578 650__ $$aPhysics
000266578 6531_ $$ananomechanical resonators
000266578 6531_ $$aclamp geometry
000266578 6531_ $$atapered-clamping
000266578 6531_ $$asilicon nitride
000266578 6531_ $$aquality factor
000266578 6531_ $$aresonators
000266578 6531_ $$aradiation
000266578 700__ $$aBereyhi, Mohammad. J.
000266578 700__ $$aBeccari, Alberto$$0260865$$g290007
000266578 700__ $$aFedorov, Sergey A.$$0249431$$g260066
000266578 700__ $$aGhadimi, Amir H.$$0246878$$g222921
000266578 700__ $$aSchilling, Ryan$$0246969$$g222928
000266578 700__ $$aWilson, Dalziel J.$$0246503$$g225172
000266578 700__ $$aEngelsen, Nils J.$$0250652$$g279082
000266578 700__ $$aKippenberg, Tobias J.$$0244694$$g182444
000266578 773__ $$k4$$j19$$q2329-2333$$tNano Letters
000266578 8560_ $$fmohammad.bereyhi@epfl.ch
000266578 909C0 $$zPasquier, Simon$$0252348$$yApproved$$pLPQM$$xU11831$$mmohammad.bereyhi@epfl.ch
000266578 909CO $$particle$$ooai:infoscience.epfl.ch:266578$$pSTI$$pSB
000266578 961__ $$apierre.devaud@epfl.ch
000266578 973__ $$aEPFL$$sPUBLISHED$$rREVIEWED
000266578 980__ $$aARTICLE
000266578 980__ $$aWoS
000266578 981__ $$aoverwrite