1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
2018
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Details
Title
1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
Author(s)
Wang, Taifang ; Ma, Jun ; Matioli, Elison
Published in
IEEE Electron Device Letters
Volume
39
Issue
7
Pages
1038-1041
Date
2018
Other identifier(s)
DOI: https://doi.org/10.1109/LED.2018.2842031
Laboratories
POWERLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > POWERLAB - Power and Wide-band-gap Electronics Research Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2019-02-22