Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Published in:
Solid State Lasers XXVII: Technology and Devices, 105112C
Presented at:
SPIE LASE, San Francisco, California, United States, 27 January - 1 February 2018
Feb 15 2018

Note: The status of this file is: Anyone

 Record created 2019-02-04, last modified 2020-10-25

Download fulltext

Rate this document:

Rate this document:
(Not yet reviewed)