Enabling proximity mask-aligner lithography with a 193 nm CW light source

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 mu m printed with proximity gaps of 20 mu m.


Published in:
Optical Microlithography Xxxi, 10587, 105871F
Presented at:
Conference on Optical Microlithography XXXI, San Jose, CA, Feb 27-Mar 01, 2018
Year:
Jan 01 2018
Publisher:
Bellingham, SPIE-INT SOC OPTICAL ENGINEERING
ISSN:
0277-786X
1996-756X
ISBN:
978-1-5106-1667-7
Keywords:
Laboratories:




 Record created 2018-12-26, last modified 2019-10-07


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