Analysis of the Bias-Dependent Split Emission Zone in Phosphorescent OLEDs

From s-polarized, angle-dependent measurements of the electroluminescence spectra in a three-layer phosphorescent organic light-emitting diode, we calculate the exciton distribution inside the 35 nm thick emission layer. The shape of the exciton profile changes with the applied bias due to differing field dependencies of the electron and hole mobilities. A split emission zone with high exciton densities at both sides of the emission layer is obtained, which is explained by the presence of energy barriers and similar electron and hole mobilities. A peak in the transient electroluminescence signal after turn-off and the application of a reverse bias is identified as a signature of a split emission zone.


Published in:
ACS Applied Materials & Interfaces, 10, 37, 31552-31559
Year:
Sep 19 2018
ISSN:
1944-8244
Keywords:
Laboratories:




 Record created 2018-12-13, last modified 2018-12-21


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