Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
2018
Details
Title
Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Author(s)
Padilla, JL ; Medina-Bailon, C ; Alper, C ; Gamiz, F ; Ionescu, AM
Published in
Applied Physics Letters
Volume
112
Issue
18
Pages
182101
Date
2018
Other identifier(s)
View record in Web of Science
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2018-11-08