000258563 001__ 258563
000258563 005__ 20190527114339.0
000258563 02470 $$2isi$$a000431452900018
000258563 0247_ $$2doi$$a10.1063/1.5012948
000258563 037__ $$aARTICLE
000258563 245__ $$aConfinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
000258563 269__ $$a2018
000258563 260__ $$c2018
000258563 336__ $$aJournal Articles
000258563 700__ $$aPadilla, JL
000258563 700__ $$aMedina-Bailon, C
000258563 700__ $$aAlper, C
000258563 700__ $$aGamiz, F
000258563 700__ $$aIonescu, AM
000258563 773__ $$k18$$j112$$tApplied Physics Letters
000258563 909C0 $$xU10328$$0252177$$pNANOLAB
000258563 909CO $$pSTI$$particle$$ooai:infoscience.epfl.ch:258563
000258563 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000258563 980__ $$aARTICLE
000258563 980__ $$aWoS