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  4. Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement
 
research article

Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

Shalchian, M
•
Jazaeri, F
•
Sallese, JM
2018
IEEE Transactions on Electron Devices
  • Details
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Type
research article
DOI
10.1109/TED.2018.2854905
Author(s)
Shalchian, M
Jazaeri, F
Sallese, JM
Date Issued

2018

Published in
IEEE Transactions on Electron Devices
Volume

65

Issue

9

Start page

4009

End page

4014

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
EDLAB  
Available on Infoscience
November 8, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/149972
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