000258413 001__ 258413
000258413 005__ 20181203025124.0
000258413 02470 $$2isi$$a000423582900026
000258413 0247_ $$2doi$$a10.1109/JEDS.2017.2782184
000258413 037__ $$aARTICLE
000258413 245__ $$aBidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy
000258413 269__ $$a2018
000258413 260__ $$c2018
000258413 336__ $$aJournal Articles
000258413 700__ $$aFumarola, A
000258413 700__ $$aSidler, S
000258413 700__ $$aMoon, K
000258413 700__ $$aJang, J
000258413 700__ $$aShelby, RM
000258413 700__ $$aNarayanan, P
000258413 700__ $$aLeblebici, Y
000258413 700__ $$aHwang, H
000258413 700__ $$aBurr, GW
000258413 773__ $$tIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY$$j6$$k1$$q169-178
000258413 909C0 $$xU10325$$0252051$$pLSM
000258413 909CO $$pSTI$$particle$$ooai:infoscience.epfl.ch:258413
000258413 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000258413 980__ $$aARTICLE
000258413 980__ $$aWoS