Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy
2018
Details
Title
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy
Author(s)
Fumarola, A ; Sidler, S ; Moon, K ; Jang, J ; Shelby, RM ; Narayanan, P ; Leblebici, Y ; Hwang, H ; Burr, GW
Published in
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume
6
Issue
1
Pages
169-178
Date
2018
Other identifier(s)
View record in Web of Science
Laboratories
LSM
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2018-11-08