An 800-MHz Mixed-V-T 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applications


Published in:
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53, 7, 2136-2148
Year:
2018
Laboratories:




 Record created 2018-11-08, last modified 2018-12-03


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