An 800-MHz Mixed-V-T 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applications
2018
Details
Title
An 800-MHz Mixed-V-T 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applications
Author(s)
Giterman, R ; Fish, A ; Geuli, N ; Mentovich, E ; Burg, A ; Teman, A
Published in
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume
53
Issue
7
Pages
2136-2148
Date
2018
Other identifier(s)
View record in Web of Science
Laboratories
TCL
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > TCL - Telecommunications Circuits Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2018-11-08