Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors, 2018 76th Device Research Conference (DRC)

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demonstrated using chemical doping of the material [5], [6]. However, since chemical doping is often non-compatible with conventional CMOS processes and is limited by the desorption of the chemical species used [5]–[7], we explore the possibilities offered by electrostatic doping. Here, we exploit the presence of Schottky barrier contacts in WSe 2 , and using electrostatic doping we achieve dynamic control of the polarity of the transistors. We fabricate, for the first time on a 2D material, a doping-free complementary inverter, providing a path for the realization of CMOS logic with a single ambipolar, undoped 2D semiconducting material.


Published in:
1-2
Presented at:
2018 76th Device Research Conference (DRC), Santa Barbara, CA, USA, USA, 24-27 June 2018
Year:
Aug 23 2018
Publisher:
IEEE
Keywords:
Note:
OPEN ACCESS
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 Record created 2018-09-28, last modified 2018-10-25

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