A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter of 107.7ps at 2.5V excess bias voltage and room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3D-stacked SPAD technology.


Published in:
2017 IEEE International Electron Devices Meeting (IEDM), 16.6.1-16.6.4
Presented at:
2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2-6, 2017
Year:
Jan 25 2018
Other identifiers:
Laboratories:




 Record created 2018-08-13, last modified 2019-08-12


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)