Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation electronic devices. Fully relying on electrostatic doping, polarity-controllable devices, that use additional gate terminals to modulate the Schottky barriers at source and drain, can strongly take advantages of 2D materials to achieve high on/off ratio and low leakage floor. Here, we provide an overview of the latest advances in 2D material processes and growth. Then, we report on the experimental demonstration of polarity-controllable devices fabricated on 2D-WSe2 and study the scaling trends of such devices using ballistic self-consistent quantum simulations. Finally, we discuss the circuit-level opportunities of such technology.


Published in:
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 637-641
Presented at:
Design, Automation & Test in Europe Conference & Exhibition, Dresden, Germany
Year:
Mar 23 2018
Keywords:
Note:
Acknowledgements: The authors wish to acknowledge support from NSF (grant 1644592) and by IMEC core partners CMOS program.
Other identifiers:
Laboratories:




 Record created 2018-08-07, last modified 2018-09-13


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