000255934 001__ 255934
000255934 005__ 20190317001004.0
000255934 0247_ $$2doi$$a10.1016/j.jmr.2018.07.002
000255934 02470 $$2DOI$$a10.1016/j.jmr.2018.07.002
000255934 037__ $$aARTICLE
000255934 245__ $$aA single chip electron spin resonance detector based on a single high electron mobility transistor
000255934 260__ $$c2018-07-05
000255934 269__ $$a2018-07-05
000255934 336__ $$aJournal Articles
000255934 520__ $$aSingle-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magnetic field (0.1 mT to 0.7 mT) and large power consumption (0.5 mW to 200 mW), severely limiting their use for the investigation of samples having long relaxation times and for operation at low temperatures. Here we report on the design and characterization of a single-chip ESR detector operating with a microwave magnetic field and a power consumption orders of magnitude lower compared with previous designs. These significant improvements are mainly due to the use of a high electron mobility transistor (HEMT) technology instead of a complementary metal-oxide-semiconductor (CMOS) technology. The realized single-chip ESR detector, which operates at 11.2 GHz, consists of an LC Colpitts oscillator realized with a single high-electron mobility transistor and a co-integrated single turn planar coil having a diameter of 440 μm. The realized detector operates from 300 K down to 1.4 K, at least. Its minimum microwave magnetic field is 0.4 μT at 300 K and 0.06 μT at 1.4 K, whereas its power consumption is 90 μW at 300 K and 4 μW at 1.4 K, respectively. The experimental spin sensitivity on a sensitive volume of about 30 nL, as measured with a single crystal of α,γ-bisdiphenylene-β-phenylallyl (BDPA)/benzene complex, is of 8×10^(10) spins/Hz^(1/2) at 300 K and 2×10^(9) spins/Hz^(1/2) at 10 K, respectively. In a volume of about 100 pL, located in proximity to the coil wire, the spin sensitivity improves by two orders of magnitude.
000255934 6531_ $$aElectron spin resonance
000255934 6531_ $$aElectron paramagnetic resonance
000255934 6531_ $$aESR
000255934 6531_ $$aEPR
000255934 6531_ $$aHEMT
000255934 6531_ $$aSingle chip detector
000255934 700__ $$aMatheoud, Alessandro V.
000255934 700__ $$aSahin, Nergiz
000255934 700__ $$aBoero, Giovanni
000255934 773__ $$tJournal of Magnetic Resonance$$j294$$q59-70
000255934 8560_ $$falessandro.matheoud@epfl.ch
000255934 8564_ $$uhttps://infoscience.epfl.ch/record/255934/files/Published%20version.pdf$$zFinal$$s1622387
000255934 909C0 $$malessandro.matheoud@epfl.ch$$mjuergen.brugger@epfl.ch$$mmohammadmahdi.kiaee@epfl.ch$$0252040$$xU10321$$pLMIS1
000255934 909CO $$qGLOBAL_SET$$pSTI$$particle$$ooai:infoscience.epfl.ch:255934
000255934 960__ $$aalessandro.matheoud@epfl.ch
000255934 961__ $$aalain.borel@epfl.ch
000255934 973__ $$aEPFL$$sPUBLISHED$$rREVIEWED
000255934 980__ $$aARTICLE
000255934 981__ $$aoverwrite