Details
Title
Gastaldi, Carlotta
Sciper ID
290351
Affiliated labs
NANOLAB
Publications
Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage
Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs
Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Subthermionic negative capacitance ion sensitive field-effect transistor
Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films
Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage
Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs
Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Subthermionic negative capacitance ion sensitive field-effect transistor
Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films
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