2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
2018
Files
Details
Title
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
Author(s)
Ma, Jun ; Matioli, Elison
Published in
Applied Physics Letters
Volume
112
Issue
5
Pages
052101
Date
2018
Laboratories
POWERLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > POWERLAB - Power and Wide-band-gap Electronics Research Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Grant
FNS: PYAPP2_166901
EU funding: ERC Grant Agreement No. 679425
EU funding: ERC Grant Agreement No. 679425
Record creation date
2018-02-27