%PDF-1.4
%
1 0 obj
<>stream
iText 4.2.0 by 1T3XT
2018-03-15T10:50:08-07:002018-01-27T03:44:30+05:302018-03-15T10:50:08-07:00Arbortext Advanced Print Publisher 9.0.114/W
uuid:943818b5-2dbc-2876-7014-124fb19b3e0fuuid:794ea4e4-21ae-2b32-5079-124fb19b3e0f
aip.orgtrue10.1063/1.50128662018-01-292 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
10.1063/1.5012866http://dx.doi.org/10.1063/1.5012866
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doi:10.1063/1.50128662 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage currentJun MaElison Matioli
2018-01-29trueaip.org10.1063/1.5012866
endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>stream
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