Details
Title
POWERLAB
Formal Name (French)
Laboratoire de dispositifs semiconducteurs de puissance
Formal Name (English)
Power and Wide-band-gap Electronics Research Laboratory
Lab Manager
Matioli, Elison
Group ID
U13020
Affiliated authors
Abdul, Riyaz Mohammed
Asencio Hurtado, Miguel Angel
Choi, Uiho
Elhagali, Ibrahim Osama
Erine, Catherine
Esteghamat, Amirhossein
Floriduz, Alessandro
Gür, Hakan Cankat
Hao, Zheng
Harrison, Samuel Mark
Jafari, Armin
Kampitsis, Georgios
Karakurt, Bartu
Krsic, Ivan
Liu, Chao
Ma, Jun
Marcantoni, Francesco
Matioli, Elison
Mazzone, Luca
Naamoun, Mehdi
Nela, Luca
Perera, Nirmana
Prieto Caballero, Ismael
Rezaei, Mohammad
Samizadeh Nikoo, Mohammad
Santoruvo, Giovanni
Siddiqui, Muhammad Ali
Sohi, Pirouz
Soleiman Zadeh Ardebili, Reza
Soydal, Önder
Tang, Weiyu
Tsirinomeny, Rosa Martel Danoary
Valterio, Katia
van Erp, Remco Franciscus Peter
Wang, Taifang
Zhu, Hongkeng
Zhu, Minghua
Zong, Yuan
Asencio Hurtado, Miguel Angel
Choi, Uiho
Elhagali, Ibrahim Osama
Erine, Catherine
Esteghamat, Amirhossein
Floriduz, Alessandro
Gür, Hakan Cankat
Hao, Zheng
Harrison, Samuel Mark
Jafari, Armin
Kampitsis, Georgios
Karakurt, Bartu
Krsic, Ivan
Liu, Chao
Ma, Jun
Marcantoni, Francesco
Matioli, Elison
Mazzone, Luca
Naamoun, Mehdi
Nela, Luca
Perera, Nirmana
Prieto Caballero, Ismael
Rezaei, Mohammad
Samizadeh Nikoo, Mohammad
Santoruvo, Giovanni
Siddiqui, Muhammad Ali
Sohi, Pirouz
Soleiman Zadeh Ardebili, Reza
Soydal, Önder
Tang, Weiyu
Tsirinomeny, Rosa Martel Danoary
Valterio, Katia
van Erp, Remco Franciscus Peter
Wang, Taifang
Zhu, Hongkeng
Zhu, Minghua
Zong, Yuan
Institute
IEM
Faculty
STI
Note
Members of POWERLAB-unit
Old institute IEL (>2021) Previous institute: IEL (>2021)
Old institute IEL (>2021) Previous institute: IEL (>2021)
Linked resource
http://powerlab.epfl.ch/
Publications
A perspective on multi-channel technology for the next-generation of GaN power devices
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
GaN-based power devices: Physics, reliability, and perspectives
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
On the Dynamic Performance of Laterally Gated Transistors
Semiconductor devices with multiple channels and three-dimensional electrodes
Tri-gate technologies for high-performance power GaN devices
p-NiO junction termination extensions for GaN power devices
See complete list of publications (149)
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
GaN-based power devices: Physics, reliability, and perspectives
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
On the Dynamic Performance of Laterally Gated Transistors
Semiconductor devices with multiple channels and three-dimensional electrodes
Tri-gate technologies for high-performance power GaN devices
p-NiO junction termination extensions for GaN power devices
See complete list of publications (149)
Record appears in
Authorities > Lab