Notice détaillée
Titre
LEG1
Formal Name (French)
Laboratoire d'électronique générale 1
Formal Name (English)
Electronics Laboratory 1
Lab Manager
Infoscience team
Auteurs affilié
Declercq, Michel
Jöhl, Norbert
Roy, Ananda Sankar
Salarian, Arash
Schlumpf, Nicolas
Stefanovic, Danica
Yodprasit, Uroschanit
Jöhl, Norbert
Roy, Ananda Sankar
Salarian, Arash
Schlumpf, Nicolas
Stefanovic, Danica
Yodprasit, Uroschanit
Institut
IEM
Faculté
STI
Note
Members of LEG1-unit
Old institute IEL (>2021) Previous institute: IEL (>2021)
Old institute IEL (>2021) Previous institute: IEL (>2021)
Lien extérieur
http://legwww.epfl.ch/
Publications
A Basic Property of MOS Transistors and its Circuit Implications
A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
Advanced Compact Models for MOSFETs
Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation
Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET
Critical Discussion on the Flatband Perturbation Technique for Calculating Low-Frequency Noise
Passive UHF RFID Systems
Reactive Power Imbalances in LC VCOs and their Influence on Phase Noise Mechanisms
Small-Signal Partitioning Scheme in Lateral Asymmetric MOSFET
Voir toutes les publications (141)
A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
Advanced Compact Models for MOSFETs
Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation
Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET
Critical Discussion on the Flatband Perturbation Technique for Calculating Low-Frequency Noise
Passive UHF RFID Systems
Reactive Power Imbalances in LC VCOs and their Influence on Phase Noise Mechanisms
Small-Signal Partitioning Scheme in Lateral Asymmetric MOSFET
Voir toutes les publications (141)
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