Notice détaillée
Titre
Shahrabi, Elmira
Sciper ID
215240
Laboratoires affiliés
LSM
Publications
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
Capillary particle assembly (CAPA) for plasmonic devices
Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
High-yield and high-precision nanoparticle assembly: towards complex plasmonic antennas
Multi-ReRAM synapses for artificial neural network training
Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
Voir toutes les publications (12)
Capillary particle assembly (CAPA) for plasmonic devices
Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
High-yield and high-precision nanoparticle assembly: towards complex plasmonic antennas
Multi-ReRAM synapses for artificial neural network training
Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
Voir toutes les publications (12)
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