Notice détaillée
Titre
Sandrini, Jury
Sciper ID
214131
Laboratoires affiliés
LSM
Publications
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
Cognitive Computing with Non-Volatile Memory Elements
Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
Fabrication, Characterization and Integration of Resistive Random Access Memories
Heterogeneous integration of ReRAM crossbars in a CMOS foundry chip
Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
Voir toutes les publications (14)
Cognitive Computing with Non-Volatile Memory Elements
Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
Fabrication, Characterization and Integration of Resistive Random Access Memories
Heterogeneous integration of ReRAM crossbars in a CMOS foundry chip
Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
Voir toutes les publications (14)
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