Notice détaillée
Titre
Chen, Ming-Wei
Sciper ID
221783
Laboratoires affiliés
LANES
Publications
Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2
Atomically Thin Two-dimensional Materials Grown by Molecular Beam Epitaxy
Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)
Free-standing electronic character of monolayer
Highly Oriented Atomically Thin Ambipolar MoSe2
Large-Area Epitaxial Monolayer MoS2
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects
Atomically Thin Two-dimensional Materials Grown by Molecular Beam Epitaxy
Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)
Free-standing electronic character of monolayer
Highly Oriented Atomically Thin Ambipolar MoSe2
Large-Area Epitaxial Monolayer MoS2
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects
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