Notice détaillée
Titre
Zhang, Jian
Sciper ID
212096
Publications
A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current
Advanced System on a Chip Design Based on Controllable-Polarity FETs (invited paper)
Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption
Multiple-Independent-Gate Nanowire Transistors: From Technology to Advanced SoC Design
On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET
Operation regimes and electrical transport of steep slope Schottky Si-FinFETS
Power-Gated Differential Logic Style Based on Double-Gate Controllable-Polarity Transistors
System Level Benchmarking with Yield-Enhanced Standard Cell Library for Carbon Nanotube VLSI Circuits
Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity
Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors
Voir toutes les publications (20)
Advanced System on a Chip Design Based on Controllable-Polarity FETs (invited paper)
Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption
Multiple-Independent-Gate Nanowire Transistors: From Technology to Advanced SoC Design
On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET
Operation regimes and electrical transport of steep slope Schottky Si-FinFETS
Power-Gated Differential Logic Style Based on Double-Gate Controllable-Polarity Transistors
System Level Benchmarking with Yield-Enhanced Standard Cell Library for Carbon Nanotube VLSI Circuits
Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity
Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors
Voir toutes les publications (20)
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