Details
Title
Grandjean, Nicolas
Sciper ID
161577
Affiliated labs
LASPE
Publications
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response
InAlN/GaN HEMTs for Operation in the 1000 degrees C Regime: A First Experiment
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
Testing the Temperature Limits of GaN-Based HEMT Devices
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
See complete list of publications (503)
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response
InAlN/GaN HEMTs for Operation in the 1000 degrees C Regime: A First Experiment
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
Testing the Temperature Limits of GaN-Based HEMT Devices
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
See complete list of publications (503)
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Grandjean, N.
Grandjean, Nicolas R.
Grandjean, Nicolas R.
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