Details
Title
Pasquarello, Alfredo
Sciper ID
109250
Affiliated labs
CSEA
Publications
Band alignment at beta -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
Comparison between various finite-size supercell correction schemes for charged defect calculations
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
First principles study of electronic and structural properties of the Ge/GeO2 interface
Formation of substoichiometric GeOx at the Ge-HfO2 interface
Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles
Intrinsic defects in GaAs and In GaAs through hybrid functional calculations
Microscopic structure of liquid GeSe2: The problem of concentration fluctuations over intermediate range distances
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
The O-As defect in GaAs: A hybrid density functional study
See complete list of publications (355)
Comparison between various finite-size supercell correction schemes for charged defect calculations
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
First principles study of electronic and structural properties of the Ge/GeO2 interface
Formation of substoichiometric GeOx at the Ge-HfO2 interface
Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles
Intrinsic defects in GaAs and In GaAs through hybrid functional calculations
Microscopic structure of liquid GeSe2: The problem of concentration fluctuations over intermediate range distances
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
The O-As defect in GaAs: A hybrid density functional study
See complete list of publications (355)
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Pasquarello, A.
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