Details
Title
Roy, Ananda Sankar
Sciper ID
163923
Affiliated labs
LEG1
Publications
A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation
Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET
Compact Modeling of Thermal Noise in the MOS Transistor
Critical Discussion on the Flatband Perturbation Technique for Calculating Low-Frequency Noise
Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation[...]
Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence
Noise and small-signal modeling of nanoscale MOSFETs
Partitioning Schemes in the Lateral Asymmetric MOST
See complete list of publications (14)
Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation
Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET
Compact Modeling of Thermal Noise in the MOS Transistor
Critical Discussion on the Flatband Perturbation Technique for Calculating Low-Frequency Noise
Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation[...]
Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence
Noise and small-signal modeling of nanoscale MOSFETs
Partitioning Schemes in the Lateral Asymmetric MOST
See complete list of publications (14)
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Roy, A. S.
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