Resistive random access memory (RRAM) technologies have recently gained large attention from the academic and industrial research communities. Significant efforts have been made to enhance the performance of the memory stacks from both communities through the design, simulation, and fabrication of novel devices. In this context, improvements can only be confirmed through a thorough device characterization process. Here comes a gap between industry and academia that usually lacks high-end test equipment to perform systematic device characterizations. In this paper, we propose a solution to fill this gap by introducing an easy, affordable, and effective field programmable gate array based RRAM characterization system.